友达董事长彭双浪阐述玻璃核心基板路线：定位OSAT上游供应商而非与群创拼面板尺寸，无新增订单

AUO is tailoring its glass core substrate specifications specifically to semiconductor process requirements rather than competing on panel dimensions with Innolux, according to Chairman and CEO Paul Peng. The company aims to leverage its glass-processing expertise to supply critical components and technologies to outsourced semiconductor assembly and test (OSAT) leaders such as ASE Technology Holding and Powertech Technology.

As advanced packaging shifts toward higher-density interconnects and larger panel formats, glass core substrates have emerged as a pivotal technology. Peng clarified that AUO is not entering the OSAT market directly. Instead, it is applying three decades of glass-processing experience to precision drilling, metallization, and circuit fabrication.
Specs shaped by chip processes
At Semicon Taiwan 2026, AUO and Corning showcased a 510×515mm glass core substrate. These dimensions diverge from standard LCD generation sizes and from those in Innolux's strategy, which involves converting its Gen 3.5 LCD line in Tainan into a fan-out panel-level packaging (FOPLP) line using larger 620×750mm glass substrates.
Peng emphasized that AUO determined its glass core substrate specifications by analyzing semiconductor processing needs, specifically IC density optimization and compatibility with 12-inch (300mm) wafer layouts. Consequently, AUO prioritized specifications suited for semiconductor manufacturing over a direct conversion of existing LCD lines.
Limits of retrofits and scale
Addressing whether legacy LCD equipment can be repurposed for glass core substrates, Peng noted that internal studies revealed only a small fraction of traditional LCD tools are compatible with advanced packaging workflows. While declining to comment on competitors' conversion strategies, he stressed that glass core substrates demand distinct processing capabilities and cannot be treated as simple production line retrofits.
Peng argued that larger substrate sizes are not inherently superior. Although glass offers low warpage and a low coefficient of thermal expansion, physical thermal expansion remains an issue. Temperature fluctuations during processing directly impact line width and positional accuracy. As a result, substrate dimensions must align with process capabilities and precision requirements rather than scaling up indiscriminately.
Thickness and via challenges
Glass thickness presents another critical variable. Some glass core substrates utilize 1.1mm-thick glass, which is significantly thicker than the 0.6mm, 0.5mm, or ultra-thin glass that is standard in LCD panel production.
The manufacturing process involves through-glass via (TGV) drilling, copper plating, and metallization. Ensuring complete, defect-free hole filling while maintaining long-term reliability remains a major technical hurdle. Glass thickness directly impacts the aspect ratio of drilled vias, elevating processing complexity and the risk of cracking or embrittlement.
Post-drilling inspection must verify the quality of hole filling and metallization. If defects occur, precise repair processes are required. AUO has integrated specialized testing and repair equipment into its manufacturing lineup to address these requirements.
For via formation, AUO primarily uses laser modification technology built upon its long-standing glass-processing foundation. The company's strategy focuses on substrate-level processing—including TGV drilling, metallization, redistribution layers, and interposer applications—tailored to client specifications.
An upstream role, not an OSAT rival
Peng highlighted that substrate processing and complete IC packaging represent distinct stages in the semiconductor value chain. AUO does not intend to compete with OSAT providers like ASE or Powertech, but aims to serve as a vital upstream partner supplying advanced glass-processing capabilities.
AUO will continue cultivating specialized talent and collaborating with clients to explore glass core substrate applications in advanced packaging, striving to secure a key position in the next-generation semiconductor supply chain.