📰 DigiTimesDigiTimesDoubao · 实盘不做把握 3/10不做原因:标的无直接敞口
北京时间·🕒 发布 09-10 12:15:05·⟳ 抓取 09-10 12:46:24 +31m19s·⚡ 决策 09-15 13:01:12 +5d00h·42.3 天前
瑶芯微联合郝跃团队、芯联集成发布号称全球首款1200V碳化硅超级结MOSFET，产品已验证并进入量产合作
直接主角瑶芯微未上市；唯一上市关联方芯联集成只是代工合作方，本次是产品验证发布而非订单，无收入量级，且消息已于9月7-8日广泛传播、5个交易日后股价无正向反应，行业放量要等2027-2028年，缺乏短线可交易edge。
📄 原文DigiTimes↗ 原文
China gets an early shot at the next SiC power-chip cycle
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不做 芯联集成（688469.SH）
直接主角瑶芯微未上市；芯联集成仅为代工合作方、无订单或收入增量，催化9月7-8日已明牌扩散且股价5日无正向反应（缩量走弱），行业放量在2027-2028年，短线无edge；不博技术题材联动。
展开详情(成交明细 / 研究档案 / 原文全文 / 决策记录链)
研究档案
结论摘要
全球首款SiC超级结MOSFET由未上市的瑶芯微发布，芯联集成仅提供代工工艺平台、无订单或收入增量；新闻9月8日已全面扩散而芯联集成股价同期走弱，属二阶技术背书，不构成短线交易机会。
消息传播链
- 9月7日“破界·启新”发布会发布1200V SiC超级结MOSFET，郝跃团队研发、芯联集成协同工艺平台
- A股财经媒体当日广泛传播，芯联集成被点名为代工合作方
- 英文产业链媒体二次报道，补充Infineon 2027量产、Bosch 2031等国际路线对比市场反应:芯联集成9月10日收跌0.48%，9月8日至14日累计约-1.1%，无正向重定价
关键理由
- 产品级验证而非客户定点或采购订单，瑶芯微尚在准备首批数据中心电源客户的商业项目，业绩贡献最早2027年后
- 芯联集成作为代工厂的角色是平台协同，未见该产品对应的产能锁定、订单金额或收入占比披露
主要风险
- 超级结SiC量产良率、成本与客户验证仍不确定，Yole预计2027-2028年才起量
- DigiTimes为9月10日二手英文报道，原始发布与中文媒体扩散始于9月7-8日，催化已偏旧
反向证据
- 做多前查反向 · 来源 web · 日期 2026-09-12 · 影响 weakens
所有报道仅描述工艺平台协同与量产合作，无客户定点、订单金额或收入占比，且Yole预计行业2027-2028才放量
检索:芯联集成 碳化硅超级结 订单 收入 客户定点 原文 ↗ - 做多前查反向 · 来源 stock_quote · 日期 2026-09-14 · 影响 invalidates
消息扩散后5个交易日芯联集成5日-2.47%、20日-11.71%、量比0.55缩量，市场未将其视为利好重定价
检索:芯联集成 近期股价对瑶芯微超结MOSFET反应
先例如何影响了这次决策
对本次决策的影响:支持对芯联集成AVOID，不因“全球首款”标题给予做多
方向:未构建先例：未上市公司技术发布映射到代工伙伴属弱二阶事件，且A股市场已以实际走势（无反应）给出答案，先例不足以也无必要改变结论
涨幅量级:无高相似对齐先例，不定tp/sl
形态:本案自身已呈现“中文媒体明牌扩散后代工方股价无反应”的见光不涨形态
工具执行结果 · 成功 5 · 降级 0 · 失败 0 · 取消 0
- search_processed_events 成功 stock_tools HTTP · 55 ms
{"result": "search_processed_events:agent query=`alkaidsemi 上海 sic superjunction mosfet 1200v 郝跃 | alkaidsemi 超结碳化硅 ai服务器电源 数据中心 hvdc | united nova technology unt 碳化硅 超结 mosfet 量产`；结构化索引覆盖完整 72 小时；旧记录兼容扫描近 0.0/72 小时、0 条本臂决策(完整)，返回 0 条候选。未命中只表示这些 agent query 表达式没有召回候选，不能据此证明消息首发或不是重复；按当前事件继续正常研判。"} - web_search 成功 doubao_search · 1,744 ms
豆包搜索结果（原始查询:Alkaidsemi Shanghai Technologies 公司 中文名 上市 融资 碳化硅；API SearchType:web） - web_search 成功 doubao_search · 1,720 ms
豆包搜索结果（原始查询:United Nova Technology UNT 碳化硅 8英寸 代工 公司；API SearchType:web） - stock_quote 成功 stock_tools HTTP · 233 ms
{ - web_search 成功 doubao_search · 1,482 ms
豆包搜索结果（原始查询:瑶芯微 超结 碳化硅 MOSFET 1200V 郝跃 芯联集成 量产；API SearchType:web）
原文全文
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China gets an early shot at the next SiC power-chip cycle
Levi Li
, DIGITIMES, Taipei
Sep 10, 2026, 12:15
0
Alkaidsemi silicon carbide superjunction MOSFET. Credit: Alkaidsemi
Alkaidsemi (Shanghai) Technologies Corporation has introduced a 1,200 V silicon carbide superjunction MOSFET that it describes as the world's first SiC superjunction MOSFET product. Project leader Hao Yue said it is among the first globally to complete product validation, positioning the company for emerging demand from AI server power supplies and high-voltage direct-current data center architectures.
The device was developed over five years with a team led by Hao Yue, an academician of the Chinese Academy of Sciences and professor at Xidian University , while foundry partner United Nova Technology (UNT) helped build the manufacturing process platform. According to Chinastarmarket.cn , the project marks a transition of SiC superjunction technology from laboratory research toward industrialization, with Alkaidsemi already preparing commercial programs for initial data center power customers.
Unlike conventional planar or trench MOSFETs, superjunction devices use alternating P-type and N-type regions to balance charge and reshape the internal electric field. The structure can lower conduction losses while preserving high breakdown voltage, improving power density and conversion efficiency. The trade-off is manufacturing complexity: epitaxial thickness, doping profiles, ion implantation, and charge balance must all remain tightly controlled across a multilayer structure.
Manufacturing window is the real breakthrough
Alkaidsemi said it addressed those constraints through several process and device-design advances, including megaelectronvolt (MeV)-class high-energy aluminum ion implantation for deep P-type regions, narrow-cell design, and a robust charge-balance design. The approach is intended to turn a narrowly defined theoretical balance point into a wider manufacturing window that can tolerate process variation.
The 1,200 V device has a reported breakdown voltage of 1,635 V and specific on-resistance of 1.27 mΩ·cm² at room temperature and 1.5 mΩ·cm² at 175 °C (347 °F). Alkaidsemi also says the device shows zero on-resistance temperature drift between 25 °C and 125 °C, a temperature coefficient below 1.2 times at 175 °C, and a Baliga figure of merit (BFOM) of 2.1 GW/cm².
That compares with temperature coefficients of roughly 1.8 to 2.2 times for conventional planar or trench technologies, according to the company. Alkaidsemi said the device increases power density by 81%, while combining lower conduction losses with high-frequency switching performance.
Shanghai Securities Journal reported that Alkaidsemi and Hao's team began their joint development work in 2021, spanning theoretical modeling, device architecture, process development, and product validation. The company has also begun mass-production cooperation with UNT and says it has already achieved mass production of 8-inch SiC MOSFETs in China, providing a manufacturing base for broader deployment.
AI power systems emerge as the first commercial target
Alkaidsemi founder and CTO Chen Kaiyu said the technology could matter at system level rather than simply improving individual device specifications. Higher power density at elevated temperatures could enable changes in module design and power architecture across electric-vehicle traction systems, on-board power electronics, and AI server power supplies.
Alkaidsemi founder Chen Kaiyu. Credit: Chinastarmarket.cn
The company sees particular potential in data center high-voltage DC systems and solid-state transformers, where higher-voltage SiC devices could reduce losses and component size. Alkaidsemi also argues that smaller die area, combined with 8-inch wafer manufacturing, could lower per-chip costs as production scales.
Its first customers are expected to come from data center high-voltage DC power systems and AI server power supplies, both of which place stringent requirements on power density and thermal performance. The device has completed performance and reliability evaluation and has passed AEC-Q101 automotive qualification, according to the company.
Commercial success will still depend on manufacturing yield, cost, and customer validation. Superjunction SiC remains difficult to scale because deviations in epitaxy, implantation, or charge balance can undermine device performance, while tighter cell structures leave less room for process variation.
China enters the next SiC technology cycle early
SiC power semiconductors are already widely used in electric vehicles, photovoltaic and energy-storage systems, data centers, and grid equipment because they combine high breakdown voltage, low losses, high-temperature operation, and high switching frequencies. Most commercial SiC MOSFETs today use planar or trench architectures, but superjunction structures are increasingly viewed as a candidate for the next performance step in high-voltage devices.
Major overseas suppliers are pursuing similar roadmaps. Infineon has released initial 1,200 V trench-superjunction samples and plans volume production in 2027, while Bosch plans to introduce superjunction technology in its fifth-generation SiC devices, which it expects to be ready around 2031. STMicroelectronics, Rohm, Toshiba, and Mitsubishi Electric are also among the companies developing the architecture.
Alkaidsemi's significance therefore lies less in simply introducing another 1,200 V MOSFET than in reaching product-level validation before the technology becomes mainstream. Hao said the device ranks among the first SiC superjunction products globally to reach that stage.
Yole Group expects superjunction SiC MOSFETs to begin gaining ground around 2027–2028 as 200 mm SiC wafer capacity expands. If that timeline holds, Alkaidsemi's early productization gives the Chinese supplier a window to establish manufacturing experience and customer qualifications before the next generation of SiC power devices moves into wider commercial deployment.
Article
edited by Ysi Chen
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Corning sees CPO and glass core as new semiconductor battlegrounds
Tomorrow's Headlines
Sep 14, 18:47
China optical transceivers avoid US FCC curbs as NPO and CPO compete in high-speed links
Tomorrow's Headlines
Sep 14, 18:46
China's AIDC token costs hinge on access to advanced GPUs
Tomorrow's Headlines
Sep 14, 18:46
Home
Tech
Semiconductors
China gets an early shot at the next SiC power-chip cycle
Levi Li
, DIGITIMES, Taipei
Sep 10, 2026, 12:15
0
Alkaidsemi silicon carbide superjunction MOSFET. Credit: Alkaidsemi
Alkaidsemi (Shanghai) Technologies Corporation has introduced a 1,200 V silicon carbide superjunction MOSFET that it describes as the world's first SiC superjunction MOSFET product. Project leader Hao Yue said it is among the first globally to complete product validation, positioning the company for emerging demand from AI server power supplies and high-voltage direct-current data center architectures.
The device was developed over five years with a team led by Hao Yue, an academician of the Chinese Academy of Sciences and professor at Xidian University , while foundry partner United Nova Technology (UNT) helped build the manufacturing process platform. According to Chinastarmarket.cn , the project marks a transition of SiC superjunction technology from laboratory research toward industrialization, with Alkaidsemi already preparing commercial programs for initial data center power customers.
Unlike conventional planar or trench MOSFETs, superjunction devices use alternating P-type and N-type regions to balance charge and reshape the internal electric field. The structure can lower conduction losses while preserving high breakdown voltage, improving power density and conversion efficiency. The trade-off is manufacturing complexity: epitaxial thickness, doping profiles, ion implantation, and charge balance must all remain tightly controlled across a multilayer structure.
Manufacturing window is the real breakthrough
Alkaidsemi said it addressed those constraints through several process and device-design advances, including megaelectronvolt (MeV)-class high-energy aluminum ion implantation for deep P-type regions, narrow-cell design, and a robust charge-balance design. The approach is intended to turn a narrowly defined theoretical balance point into a wider manufacturing window that can tolerate process variation.
The 1,200 V device has a reported breakdown voltage of 1,635 V and specific on-resistance of 1.27 mΩ·cm² at room temperature and 1.5 mΩ·cm² at 175 °C (347 °F). Alkaidsemi also says the device shows zero on-resistance temperature drift between 25 °C and 125 °C, a temperature coefficient below 1.2 times at 175 °C, and a Baliga figure of merit (BFOM) of 2.1 GW/cm².
That compares with temperature coefficients of roughly 1.8 to 2.2 times for conventional planar or trench technologies, according to the company. Alkaidsemi said the device increases power density by 81%, while combining lower conduction losses with high-frequency switching performance.
Shanghai Securities Journal reported that Alkaidsemi and Hao's team began their joint development work in 2021, spanning theoretical modeling, device architecture, process development, and product validation. The company has also begun mass-production cooperation with UNT and says it has already achieved mass production of 8-inch SiC MOSFETs in China, providing a manufacturing base for broader deployment.
AI power systems emerge as the first commercial target
Alkaidsemi founder and CTO Chen Kaiyu said the technology could matter at system level rather than simply improving individual device specifications. Higher power density at elevated temperatures could enable changes in module design and power architecture across electric-vehicle traction systems, on-board power electronics, and AI server power supplies.
Alkaidsemi founder Chen Kaiyu. Credit: Chinastarmarket.cn
The company sees particular potential in data center high-voltage DC systems and solid-state transformers, where higher-voltage SiC devices could reduce losses and component size. Alkaidsemi also argues that smaller die area, combined with 8-inch wafer manufacturing, could lower per-chip costs as production scales.
Its first customers are expected to come from data center high-voltage DC power systems and AI server power supplies, both of which place stringent requirements on power density and thermal performance. The device has completed performance and reliability evaluation and has passed AEC-Q101 automotive qualification, according to the company.
Commercial success will still depend on manufacturing yield, cost, and customer validation. Superjunction SiC remains difficult to scale because deviations in epitaxy, implantation, or charge balance can undermine device performance, while tighter cell structures leave less room for process variation.
China enters the next SiC technology cycle early
SiC power semiconductors are already widely used in electric vehicles, photovoltaic and energy-storage systems, data centers, and grid equipment because they combine high breakdown voltage, low losses, high-temperature operation, and high switching frequencies. Most commercial SiC MOSFETs today use planar or trench architectures, but superjunction structures are increasingly viewed as a candidate for the next performance step in high-voltage devices.
Major overseas suppliers are pursuing similar roadmaps. Infineon has released initial 1,200 V trench-superjunction samples and plans volume production in 2027, while Bosch plans to introduce superjunction technology in its fifth-generation SiC devices, which it expects to be ready around 2031. STMicroelectronics, Rohm, Toshiba, and Mitsubishi Electric are also among the companies developing the architecture.
Alkaidsemi's significance therefore lies less in simply introducing another 1,200 V MOSFET than in reaching product-level validation before the technology becomes mainstream. Hao said the device ranks among the first SiC superjunction products globally to reach that stage.
Yole Group expects superjunction SiC MOSFETs to begin gaining ground around 2027–2028 as 200 mm SiC wafer capacity expands. If that timeline holds, Alkaidsemi's early productization gives the Chinese supplier a window to establish manufacturing experience and customer qualifications before the next generation of SiC power devices moves into wider commercial deployment.
Article
edited by Ysi Chen
AI Search
Related stories
EYEQ Lab completes 200mm SiC line validation with yield above 90%
Power Integrations unveils 1700V GaN auxiliary PSU for AI data centers
Demand surge for power semiconductors reshapes data-center power and cooling, pushing suppliers toward SiC and GaN
Inergy Technology eyes SiC expansion for HVDC as AI power demand rises
STM, Onsemi tackle soaring AI data-center power demand with new SiC and GaN tech
Show more
Categories
Chips + components Passive, PCB, other IC components
Tags
China data center manufacturing MOSFET Shanghai SiC technology
Share this article
Other links
Related topics
Global supply chain: China market
Asia
Regions
BIZ FOCUS
Sep 14, 08:00
Hauman Unveils Micro LED Testing Breakthrough for AI Optical Interconnects
Monday 14 September 2026
Scaling Photonics: Assembly, Test and Fiber Automation at SEMICON Taiwan
Friday 11 September 2026
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Update: ABF substrate maker Unimicron searched in origin-labeling probe
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