朗道燧岩（上海）公开亮相国产EUV光源样机FlintNano，称国产化率90%但距量产仍需3–5年

Chinese semiconductor technology start-up Langdao Silex (Shanghai) Technology has publicly unveiled an extreme ultraviolet (EUV) light source prototype with a claimed 90% localization rate, marking progress in China's efforts to develop domestic lithography technology. However, the system remains three to five years from mass production, with output power and long-term stability posing major engineering challenges.

The prototype made its debut at the 26th China International Industry Fair in Shanghai on October 14. According to IT Home , ICsmart , and Guancha.cn , on-site staff described it as among the most advanced publicly demonstrated domestic EUV light sources, with most core components developed in-house. The system follows the same technological approach as leading international suppliers and can be used for chip exposure testing.
EUV light sources are critical to lithography systems used in advanced semiconductor manufacturing, particularly at 7nm and below. China's access to such equipment has long been restricted by overseas technology controls, making domestic source development an important part of its efforts to reduce dependence on foreign semiconductor technology.
FlintNano EUV source exceeds 15W, but production gap remains
Langdao Silex's low-power FlintNano LPP-OXXO system uses laser-produced plasma (LPP) technology, the same fundamental approach employed by leading commercial EUV source suppliers.
According to the company's published specifications, FlintNano operates with a 1,000W driving laser at frequencies of 1–20kHz, achieving conversion efficiency above 2%, EUV output exceeding 15W, and brightness of 100W/(mm2·sr). It supports continuous operation for more than 100 hours, with a plasma size of 60 micrometers, plasma stability of 3% RMS, and energy stability of 5%.
The FlintNano-LPP series has entered product development towards commercialization, while the higher-power FlintMicro-LPP series has completed proof-of-principle validation.
The distinction is significant. Commercial EUV lithography requires source power measured in hundreds of watts, alongside sustained reliability. ASML reached 250W in 2018, enabling high-volume semiconductor manufacturing, and has since demonstrated a 1,000W source as part of its longer-term development program.
Langdao Silex's prototype therefore establishes the feasibility of its technical approach rather than readiness for high-volume chip manufacturing. Moving beyond the current 15W-class output will require improvements in laser power, plasma stability, source lifetime, and system integration.
Key engineering challenges include high-power CO₂ driving lasers, stable tin-droplet generators, and durable collector mirrors. These subsystems are essential to generating sufficient EUV radiation while maintaining the reliability required for semiconductor production.

Compiled by DIGITIMES, Oct. 2026
Tsinghua-linked development targets core EUV technologies
Founded in 2024, Langdao Silex builds on research from Tsinghua University's Gas Discharge Plasma Laboratory. Founder Hao Wang and his team focus on LPP-based EUV sources for semiconductor lithography, alongside technologies supporting photoresist and photomask inspection.
The company has organized its development around three businesses: Suiyan, specializing in EUV light source systems; Huiguang, developing high-power axial-flow CO₂ lasers; and Tiansuan, focused on plasma simulation software.
The latter two businesses support its efforts to develop higher-power, more stable, and longer-lasting EUV sources, addressing technical challenges beyond the light source prototype itself.
Langdao Silex secured angel funding in October 2025 from Shanghai Zhangjiang Suiyue Venture Capital Partnership, backed by Zhangjiang Hi-Tech, bringing cumulative financing above CNY10 million (≈ US$1.49 million). The company subsequently completed an angel-plus round in January 2026 and Series A financing in July, with investors including Beijing Rich Land Capital and China Fortune-Tech Capital, and established operations at the Shanghai Integrated Circuit Design Industrial Park.
Despite that progress, the company estimates another three to five years will be needed before its EUV source reaches mass production. Higher output power alone will not be sufficient: consistent plasma generation, collector durability, and dependable system operation must also meet industrial requirements.
For China's semiconductor industry, the prototype represents progress towards a domestic EUV light source, but not yet a production-ready alternative to established EUV light sources. The next challenge is translating successful prototype operation into the power, stability, and reliability required for advanced chip manufacturing.