event-trade登录编辑
Semiconductor EngineeringQwen · 实盘不做把握 1/10
北京时间·🕒 发布 15:02:11时区推断·⟳ 抓取 15:31:16·⚡ 决策 08-06 15:54:44 +23m28s·82.3 天前

Infineon IR HiRel抗辐照MOSFET选型文(产品宣传,无催化)

📄 原文Semiconductor Engineering↗ 原文
Choosing The Right Power Device: Rad Hard Vs. Rad Tolerant MOSFETs
Selecting the right device class is a strategic decision based on mission life and cost. Between cosmic rays and solar…
不做 英飞凌(IFX.DE)
产品宣传/选型指南类内容:仅介绍IR HiRel抗辐照与耐辐照MOSFET的选型逻辑,无订单金额、营收增量或供需变化,对英飞凌(IFX.DE)无市值级催化,不做。
展开详情(成交明细 / 研究档案 / 原文全文 / 决策记录链)

研究档案

🔎 新鲜度:最早出现 2026-08-06 · 扩散 low · price-in 风险 low ↗

原文全文

展开原文 · 3,060 字
Selecting the right device class is a strategic decision based on mission life and cost.
Between cosmic rays and solar flares, there is no environment more detrimental to electronics than space. That’s why choosing the right semiconductor device for your power designs is so critical. Continue reading to learn the key differences between radiation hardened (rad hard) and radiation tolerant (rad tol) power components and learn which technology better suits your system.
When designing for high reliability applications, the choice between rad hard and rad tol components isn’t just semantics; it’s a strategic decision based on mission life and cost. IR HiRel offers a wide selection of power technologies and voltage classes designed to navigate these trade-offs.
For missions with a shorter lifespan where cost is a primary constraint, rad tolerant devices offer a pragmatic solution. Rad tol MOSFETs strike an ideal balance for low Earth orbit (LEO) applications: they offer sufficient radiation robustness to ensure reliable performance without the cost or demands of full radiation-hardening.
If your application requires utmost performance in extreme environments, the latest rad hard technology from Infineon IR HiRel is your best option. Our rad-hard-by-design devices are engineered to excel in critical performance areas, including on-resistance (RDS(on)), gate charge (Qg), and Safe Operating Area (SOA). Our rad hard power components, including Silicon (Si) FETs and Gallium Nitride (GaN) transistors, feature Defense Logistics Agency (DLA) qualification under the associated MIL-PRF and JANS testing requirements, ensuring consistently reliable performance in space.
Perhaps the most critical differentiator is Single Event Effect (SEE) robustness. In the radiation-rich environment of space, a single particle strike can cause a device to latch up or fail catastrophically. IR HiRel’s MOSFETs are engineered to withstand these effects, ensuring your power system remains stable even when hit by energetic particles. By selecting the right device class, you ensure that your design meets application requirements without over-engineering or under-protecting your system.
Some may consider selecting automotive or commercial parts as an alternative to rad tol components, specifically within LEO applications. But LEO is not free from high-energizing particles – Galactic Cosmic Rays (GCRs), solar particles, albedo neutrons and more all play a part in withering space electronics. Selecting rad tol power components is an important choice in safeguarding NewSpace satellites, helping to reduce unnecessary launches and future costs.
Designing for space requires an understanding of the invisible threats your components face. By leveraging IR HiRel’s diverse portfolio of rad hard and rad tol power components, you can balance cost, performance, and robustness to create systems that truly stand the test of time.
Ready to find the perfect MOSFET for your next mission? Download our product selection guide and explore all IR HiRel has to offer.

决策记录链 · 只追加

每次领取产生一条记录,重新决策追加一条并以 supersedes 指向被替代的记录(ADR 0014)。

这条决策早于决策账本(2026-10-08 起逐条追加),没有追加记录。