三星电子与ASML扩大合作：计划2028年率先在先进DRAM量产中导入High-NA EUV，并加入ASML主导的300mm（12英寸）光掩模联盟

Samsung Electronics plans to become the first in the industry to introduce high-numerical-aperture (High-NA) extreme ultraviolet (EUV) lithography equipment from Dutch semiconductor equipment maker ASML into advanced DRAM manufacturing facilities by 2028. The companies will also jointly develop large 300mm photomasks.
Samsung Electronics announced the expanded cooperation with ASML on next-generation semiconductor manufacturing on Sept. 8.
"Building on the results of our existing cooperation with ASML, we will accelerate the development and adoption of next-generation technologies needed to manufacture advanced artificial intelligence (AI) semiconductors," Samsung said. "The cooperation means High-NA EUV technology is ready for full-scale application in advanced memory, following its use in foundry manufacturing processes."
High-NA refers to a numerical aperture of 0.55, a measure of a lens's ability to collect light. Low-NA EUV equipment has a numerical aperture of 0.33. The improved light-gathering capability allows High-NA systems to print finer and more precise semiconductor circuit patterns than Low-NA equipment.
Samsung plans to use the ultra-fine patterning technology to overcome the limits of DRAM scaling. It also aims to simplify circuit-forming processes and improve productivity.
○ Samsung Joins 300mm Photomask Consortium
Samsung will also participate in a large-mask consortium led by ASML. The consortium was formed to transition the photomask standard for semiconductor lithography equipment to 300mm.
Samsung will play a key role in the transition to 300mm photomasks based on its experience in memory manufacturing and semiconductor foundry production, as well as its track record in EUV operations. Consortium members will jointly review global technology trends in lithography equipment and photomasks.
A photomask is a precision template used to form microscopic electronic circuits on semiconductor wafers. Inside lithography equipment, light is projected through the mask to transfer circuit designs onto a wafer. Patterning precision affects semiconductor computing performance and yield.
The industry has traditionally used 150mm photomasks. With 150mm masks, High-NA EUV equipment has about half the exposure field of Low-NA EUV systems, meaning the area that can be patterned in a single exposure is smaller. Large chip circuits therefore need to be exposed in two sections. This is because the optical system was modified to prevent light interference and shadowing effects.
The separately exposed circuit sections must then be connected through a process known as stitching. Switching to 300mm masks eliminates the stitching constraint. This can reduce process steps, improve productivity and lower chip manufacturing costs. Samsung believes 300mm masks will be necessary to maximize the performance of High-NA EUV equipment in advanced semiconductor manufacturing, where tens of billions of transistors are densely packed onto a chip.
"Samsung Electronics is strengthening its leadership in advanced semiconductor manufacturing, including foundry and memory," said Jun Young-hyun, vice chairman of Samsung Electronics. "By strengthening our cooperation with ASML, we will establish the technology foundation for the next generation of AI."
"Samsung Electronics has long been one of ASML's most important partners, and we have advanced semiconductor manufacturing technology together," said Christophe Fouquet, chief executive officer of ASML. "In the new era driven by AI, we will continue to lead next-generation semiconductor manufacturing innovation together with Samsung Electronics."