Eugene Technology完成用于10纳米以下DRAM的TiN ALD设备开发并准备商业化

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Eugene Technology Completes Development of TiN ALD Tool for Sub-10nm DRAM
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Company targets commercialization and challenges foreign suppliers dominating the market
JEONG IL JOO
UPDATE 2026.08.04 17:48
Published 2026.08.04 17:40
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Applied Materials' Endura Trillium ALD system for 2nm gate-all-around (GAA) semiconductor processes. (Photo: Applied Materials)
Eugene Technology has completed development of a titanium nitride (TiN) atomic layer deposition (ALD) system for sub-10-nanometer (nm) DRAM manufacturing and is preparing for commercialization. The market has been effectively dominated by foreign suppliers such as Applied Materials and Lam Research. Domestic competitors including Jusung Engineering and Wonik IPS have also developed similar equipment, but their products remain in the evaluation stage. Eugene Technology is now nearing commercialization after approximately four years and nine months of development.
The company said on Aug. 4 that it will complete development of its "TiN ALD system for manufacturing capacitor electrode films in sub-10nm DRAM" this month. The equipment is currently undergoing demonstration evaluations to verify its performance. The process involves running customers' patterned wafers through the system to confirm targeted process specifications. Patterned wafers are wafers containing fine circuit structures and represent products that have undergone, or completed, front-end semiconductor processing.
A key feature of Eugene Technology's sub-10nm TiN ALD system is productivity that exceeds existing overseas equipment by more than twofold. The company said its multi-stage architecture enables high wafer-per-hour (WPH) throughput. High step coverage is achieved through the integration of proprietary equipment components and chemical-material technologies.
Step coverage refers to the ability to deposit thin films with uniform thickness regardless of wafer surface topology. Coverage approaching 100% allows films to be formed evenly along the sidewalls and bottom surfaces of complex, high-aspect-ratio three-dimensional structures.
A DRAM cell consists of a transistor and a capacitor. The capacitor stores electrical charge and is structured with conductive electrode films surrounding an insulating layer that blocks current flow. These structures are fabricated in narrow and deep geometries. If the electrode or insulating films are non-uniform or contain discontinuities, semiconductor defects and reliability issues can result. High step coverage is therefore critical.
ALD is a derivative of chemical vapor deposition (CVD) technology that builds thin films one atomic layer at a time through chemical reactions. Because of its self-limiting characteristics, once a surface layer is saturated with reactants, additional precursor gas does not create further film growth. This allows process gases to reach the bottom of deep trenches without sealing off narrow openings, enabling highly conformal deposition and making ALD particularly suitable for high-aspect-ratio structures.
Eugene Technology said it improved the system's mechanical design to ensure uniform precursor gas distribution and precise exhaust control. The company also localized key ALD components, including throttle valves, magnetic fluid seals and motor-driven systems, incorporating them into the tool after customer evaluations. Throttle valves precisely regulate deposition pressure, while magnetic fluid seals maintain high-vacuum conditions around rotating shafts. By localizing major vacuum and mechanical components, the company expects to reduce supply-chain risks arising from geopolitical uncertainties.
The company plans to pursue qualification testing with domestic memory manufacturers using the new system. Its goal is to replace products supplied by foreign equipment makers that currently dominate the sub-10nm DRAM capacitor electrode deposition market and ultimately secure significant market share. Eugene Technology also intends to expand into other deposition processes with related technological requirements.
"The TiN ALD equipment market for sub-10nm DRAM processes is currently dominated by overseas suppliers such as Lam Research and Applied Materials," an industry source said. "Domestic equipment makers including Wonik IPS and Jusung Engineering have developed competing systems, but those products are still in the evaluation stage and currently hold little market share."
As DRAM manufacturing continues to scale below the 10nm node, ALD technology capable of precisely depositing capacitor electrode films has become essential. Eugene Technology began developing the system in 2021 to compete with domestic rivals such as Jusung Engineering and Wonik IPS and to meet the process requirements of leading memory manufacturers.
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