SK海力士通过Solidigm申请为大连NAND厂增配美制设备，以赴美新建NAND厂为交换条件（路透未证实）

SK h ynix ( SKHY ) is seeking U.S. approval to install more American chipmaking equipment at its China facility as a condition for building a new NAND flash memory factory in the U.S. through its subsidiary Solidigm , Reuters reported, citing people familiar with the matter. Solidigm has applied for a license to install additional equipment in Mod B, a section of the Dalian facility that was completed in 2023 but left partially unequipped after a downturn in the memory market. One person familiar with the matter said that higher production in China would help fund Solidigm’s planned U.S. NAND factory and provide a bridge to increased production in the U.S. The Dalian facility uses equipment from Lam Research ( LRCX ), Applied Materials ( AMAT ) and KLA ( KLAC ). NAND flash memory is used in solid-state drives for AI data centers and cloud computing. The request comes amid tighter U.S. restrictions on semiconductor equipment exports to China. Last year, the U.S. Commerce Department revoked authorizations that had exempted SK hynix ( SKHY ) and Samsung Electronics ( SSNLF ) from applying for licenses to receive American chipmaking equipment at their Chinese facilities. The department said it would issue licenses to allow the companies to operate their existing facilities but did not expect to approve equipment licenses for capacity expansion or technology upgrades. SK hynix ( SKHY ) received a license for its Dalian facility for 2026 that limited the quantity of equipment. Approval for additional U.S.-made equipment and technology shipments in 2027 had not yet been issued, the report added. Solidigm is weighing an IPO as early as 2027 to raise funds that could help finance the U.S. factory. Separately, SK hynix ( SKHY ) is in talks with Intel ( INTC ) to lease part of its planned Ohio facility and has broken ground on an advanced packaging plant for high-bandwidth memory in Indiana. SK hynix shares fell 11% in Seoul on Thursday amid a broader technology selloff.