韩媒称三星将采用台积电3nm工艺生产英伟达NVHBM基底裸片，系未证实报道且已在夜盘/盘前被重定价

Samsung Electronics ( SSNLF ) will use Taiwan Semiconductor Manufacturing Co.’s ( TSM ) 3-nanometer process to produce base dies for Nvidia’s ( NVDA ) next-generation custom high-bandwidth memory chips, the Seoul Economic Daily reported Sunday. Nvidia has asked Samsung, SK Hynix ( SKHY ) and Micron Technology ( MU ) to use TSMC’s process for NVHBM base dies and sixth-generation DRAM technology for core dies, the newspaper reported, citing industry sources. The move would mark the first time Samsung has collaborated with TSMC at the HBM manufacturing stage, according to the report. Unveiled in August, NVHBM integrates Nvidia’s custom memory controller into the base die and aims to standardize implementation across multiple memory suppliers. Samsung agreed to Nvidia’s requirements following an internal review but plans to retain its in-house manufacturing model for standard HBM and custom products developed for other customers, the report said. Samsung is also evaluating whether its own foundry could manufacture NVHBM base dies if demand exceeds TSMC’s capacity, the newspaper added.